Product description:IO-1210 TO-257 1200V/10A silicon carbide Schottky diode
IO-1210 is a high-temperature silicon carbide (SiC) Schottky diode packaged in TO-257 sealed metal. It is suitable for achieving efficient po
IO-1210 is a high-temperature silicon carbide (SiC) Schottky diode packaged in TO-257 sealed metal. It is suitable for achieving efficient power supply voltage rectifiers, such as in AC-DC converters. This product is guaranteed to operate normally throughout the entire range of -55 ° C to+210 ° C (Tj). The breakdown voltage of this device exceeds 1200V and can switch currents up to 10A. The forward voltage of SiC Schottky diode is 1.2V at 10A. At 175 ° C (Tc), the maximum continuous DC current is 10A. The repetitive peak Fwd surge current is 12A. Original IO-1210 100% original CISSOID 100% original