Original EVK-HADES1210

EVK-HADES1210 High Temperature, High Voltage, High Reliability, High Voltage Isolated Gate Driver

The EVK-HADES1210 evaluation kit implements a power half bridge based on HADES v2 isolated gate driver and two CISSOID NEPTUNE (a 10A/1200V SiC MOSFET).

It includes an evaluation board that can be immediately used to implement power converters or motor drives, designed for bus voltages up to 1200V and application currents up to 10A. Two channels can be controlled independently of each other or use locally generated non overlapping delays.

This reference design is based on the second-generation HADES chipset, which consists of two devices: the main device CHT-HADES2P and the auxiliary device CHT-HADES2S.

This solution includes an isolated power supply built around the CHT-HADES2P PWM controller.

Evaluation Board EVK-HADES2 ® It can be used for real-time testing of SiC MOSFET devices. This board is equipped with ceramic encapsulated CISOID integrated circuits, ensuring operation within the temperature range of -55 ° C to+225 ° C. The board is based on polyimide PCB (rated temperature 200 ° C). Passive components and desaturated diodes allow operation at temperatures up to 175 ° C and may be briefly offset to 225 ° C for testing. The evaluation board is accompanied by a complete electrical schematic, a material list including active and passive components, and Gerber files.  Original   EVK-HADES1210  100% original    CISSOID   100% original