Original CMT-TIT0697

High temperature 1200V half bridge SIC MOSFET gate driver (optimized for XM3 power module)

CMT-TIT0697 is a gate driver board optimized for XM3 silicon carbide (SiC) MOSFET power modules with a rated temperature of 125 ° C (Ta). This board is based on the CISOID HADES gate driver chipset and can provide heating margin for high-density power converter designs in automotive and industrial applications. It can achieve high-frequency (>100KHz) and fast SiC MOSFET switching (dV/dt>50KV/µ s), thereby improving efficiency and reducing the size and weight of the power converter.



This board is designed specifically for harsh voltage environments and supports a 1200V power module with a drive isolation voltage of up to 3600V (50Hz, 1 minute) and a creepage distance of 14mm. Protection functions such as Undervoltage-lockout (UVLO), active miller clamping (AMC) and desaturation detection ensure safe driving and reliable protection of the power module in case of failure.   Original   CMT-TIT0697  100% original    CISSOID   100% original