Original CMT-HADES2S

CMT-HADES2S High temperature and high reliability gate driver secondary side IC (175 ° C)

CMT-HADES2S is a high-temperature and highly reliable single chip fully integrated gate driver designed specifically for driving broadband gap high-voltage/high-power transistors, especially gallium nitride (GaN) and silicon carbide (SiC) devices. Due to its small size and limited number of external components required, it provides the most compact solution on the market. It also has the highest output current among similar products in the industry.



CMT-HADES2S can be used with standard silicon MOSFETs and IGBTs in standard temperature applications (such as 125 ° C), which can increase reliability and service life by an order of magnitude compared to traditional solutions. This circuit has push-pull transistors, each capable of providing/absorbing up to 12A of current. It also includes soft shutdown, Undervoltage-lockout, desaturation detection, active Miller clamping, overheat detection and isolation interfaces for main functions.



CMT-HADES2S can be used alone or in combination with CMT-HADES2P, which can generate control signals to drive high bandwidth transistors.   Original   CMT-HADES2S  100% original    CISSOID   100% original