Original CHT-PLUTO-C1230

CHT-PLUTO-C1230 1200V/30A buck or boost SIC MOSFET module

CHT-PLUTO-C1230 is a high-temperature 1200V/30A buck or boost module, which consists of a silicon carbide (SiC) MOSFET and a silicon carbide Schottky diode, independent of each other. Suitable for achieving efficient Buck or Boost DC-DC converters in high-temperature environments. This product is guaranteed to operate normally throughout the entire range of -55 ° C to+210 ° C (Tj). The breakdown voltage of each device exceeds 1200V and can switch currents up to 30A. The conduction resistance of SiC MOSFET is 20m Ω at 25 ° C and 60m Ω at 210 ° C and VGS=20V. The forward voltage of SiC Schottky diode is 1.35V at 30A.  Original   CHT-PLUTO-C1230 100% original    CISSOID   100% original