Original CMT-PLA3SB12340AA

CMT-PLA3SB12340AA is a three-phase 1200V/340A silicon carbide (SiC) MOSFET intelligent power module based on the CISOID HADES2 chipset, which integrates power switches and gate drivers.

This module is cooled by a lightweight AlSiC flat substrate, which can meet the requirements of high power density converters. It provides a SiC power module designed specifically for operation at high junction temperatures up to 175 ° C. Compared with IGBT modules, this solution can fully leverage the advantages of SiC technology, achieving high efficiency, high power density, and high reliability through low switching losses and high-temperature operation.

The integration of gate drivers and power modules provides direct access to fully validated and optimized solutions (SSDs) for switching speed and losses, robustness against dI/dt and dV/dt, and power level protection (Desat, UVLO, AMC). Original   CMT-PLA3SB12340AA  100% original    CISSOID   100% original