Original CHT-PLUTO-B1230

CHT-PLUTO-B1230 high-temperature and high-pressure 1200V/30A dual SIC MOSFET module

CHT-PLUTO-B1230 is a high-temperature 1200V/30A dual silicon carbide MOSFET with a single sealed module. Intrinsic diode can be used as Flyback diode. It is recommended to use a small duty cycle to limit the loss. It is suitable for implementing power half bridges for applications such as DC-DC converters or motor drives in high-temperature environments. Two independent switches can be used in parallel to provide a total current of 60A. This product is guaranteed to operate normally throughout the entire range of -55 ° C to+210 ° C (Tj). The breakdown voltage of each MOSFET exceeds 1200V and can switch currents up to 30A. Their conduction resistance is 20m Ω at 25 ° C and 60m Ω at 210 ° C and VGS=20V. Original   CHT-PLUTO-B1230  100% original    CISSOID   100% original